d a t a sh eet product data sheet 2003 may 13 discrete semiconductors baw101s high voltage double diode db ook, halfpage mbd128
2003 may 13 2 nxp semiconductors product data sheet high voltage double diode baw101s features ? small plastic smd package ? high switching speed: max. 50 ns ? high continuous reverse voltage: 300 v ? electrically insulated diodes. applications ? high voltage switching ? automotive ? communication. description the baw101s is a high-speed switching diode array with two separate dice, fabricated in planar technology and encapsulated in a small sot363 plastic smd package. marking note 1. ? = p: made in hong kong. ? = t: made in malaysia. ? = w: made in china. pinning type number marking code (1) baw101s k2 ? pin description 1 anode 1 2 n.c. 3 cathode 2 4 anode 2 5 n.c. 6 cathode 1 handbook, halfpage mbl892 top view 13 2 4 5 6 13 2 6 4 5 fig.1 simplified outline (sot363) and symbol.
2003 may 13 3 nxp semico nductors product data sheet high voltage double diode baw101s limiting values in accordance with the absolute maximum rating system (iec 60134). note 1. device mounted on an fr4 printed-circuit board, cathode-lead mounting pad = 1 cm 2 . electrical characteristics t j = 25 c unless otherwise specified. note 1. pulse test: pulse width = 300 s; = 0.02. symbol parameter conditions min. max. unit per diode v r continuous reverse voltage ? 300 v series connection ? 600 v v rrm repetitive peak reverse voltage ? 300 v series connection ? 600 v i f continuous forward current single diode loaded; note 1; see fig.2 ? 250 ma double diode loaded; note 1; see fig.2 ? 140 ma i frm repetitive peak forward current ? 625 ma i fsm non-repetitive peak forward current square wave; t j = 25 c prior to surge; t = 1 s ? 4.5 a p tot total power dissipation t amb = 25 c; note 1 ? 350 mw t stg storage temperature ? 65 +150 c t j junction temperature ? 150 c t amb operating ambient temperature ? 65 +150 c symbol parameter conditions min. max. unit per diode v br(r) reverse breakdown voltage i r = 100 a 300 ? v v f forward voltage i f = 100 ma; note 1 ? 1.1 v i r reverse current v r = 250 v ? 150 na v r = 250 v; t amb = 150 c ? 50 a t rr reverse recovery time when switched from i f = 30 ma to i r = 30 ma; r l = 100 ? ; measured at i r = 3 ma ? 50 ns c d diode capacitance v r = 0 v; f = 1 mhz ? 2 pf
2003 may 13 4 nxp semico nductors product data sheet high voltage double diode baw101s thermal characteristics notes 1. one or more diodes loaded. 2. device mounted on an fr4 printed-circuit board, cathode-lead mounting pad = 1 cm 2 . symbol parameter conditions value unit r th j-s thermal resistance from junction to soldering point note 1 255 k/w r th j-a thermal resistance from junction to ambient note 2 357 k/w graphical data handbook, halfpage 0 (1) (2) 50 100 t amb ( c) i f (ma) 200 300 0 100 200 150 mle057 device mounted on an fr4 printed-circuit board. cathode-lead mounting pad = 1 cm 2 . fig.2 maximum permissible continuous forward current as a function of ambient temperature. (1) single diode loaded. (2) double diode loaded. handbook, halfpage 02 600 i f (ma) 0 200 400 mbg384 1 v f (v) (1) (3) (2) (1) t j = 150 c; typical values. (2) t j = 25 c; typical values. (3) t j = 25 c; maximum values. fig.3 forward current as a function of forward voltage.
2003 may 13 5 nxp semico nductors product data sheet high voltage double diode baw101s handbook, full pagewidth mbg703 10 t p ( s) 1 i fsm (a) 10 2 10 ? 1 10 4 10 2 10 3 10 1 fig.4 maximum permissible non-repetitive peak fo rward current as a function of pulse duration. based on square wave currents. t j = 25 c prior to surge. handbook, halfpage 200 100 50 0 150 10 2 10 1 10 ? 1 10 ? 2 mle058 (1) (2) t j ( c) i r ( a) fig.5 reverse current as a function of junction temperature. (1) v r = v rmax : maximum values. (2) v r = v rmax : typical values. handbook, halfpage 02 10 0.6 0.5 0.3 0.2 0.4 4 v r (v) c d (pf) 68 mle059 fig.6 diode capacitance as a function of reverse voltage; typical values. f = 1 mhz; t j = 25 c.
2003 may 13 6 nxp semico nductors product data sheet high voltage double diode baw101s handbook, halfpage 050 t amb ( c) v r (v) 100 200 400 300 100 0 200 150 mle060 fig.7 maximum permissible continuous reverse voltage as a function of ambient temperature.
2003 may 13 7 nxp semico nductors product data sheet high voltage double diode baw101s package outline references outline version european projection issue date iec jedec eiaj sot363 sc-88 wb m b p d e 1 e pin 1 index a a 1 l p q detail x h e e v m a a b y 0 1 2 mm scale c x 13 2 4 5 6 plastic surface mounted package; 6 leads sot363 unit a 1 max b p cd e e 1 h e l p qy w v mm 0.1 0.30 0.20 2.2 1.8 0.25 0.10 1.35 1.15 0.65 e 1.3 2.2 2.0 0.2 0.1 0.2 dimensions (mm are the original dimensions) 0.45 0.15 0.25 0.15 a 1.1 0.8 97-02-28
2003 may 13 8 nxp semico nductors product data sheet high voltage double diode baw101s data sheet status notes 1. please consult the most recently issued document before initiating or completing a design. 2. the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. the latest pr oduct status information is available on the internet at url http://www.nxp.com. document status (1) product status (2) definition objective data sheet development this document contains data from the objective specification for product development. preliminary data sheet qualification this document contains data from the preliminary specification. product data sheet production this document contains the product specification. disclaimers general ? information in this docu ment is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shal l have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, airc raft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for incl usion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are fo r illustrative purposes only. nxp semiconductors makes no representation or warranty that su ch applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. expo sure to limiting values for extended periods may af fect device reliability. terms and conditions of sale ? nxp semico nductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile /terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in th is document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick refere nce data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not complete, exhaustive or legally binding.
nxp semiconductors contact information for additional information please visit: http://www.nxp.com for sales offices addresses send e-mail to: salesaddresses@nxp.com ? nxp b.v. 2009 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owne r. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reli able and may be changed without notice. no liabilit y will be accepted by the publisher for any consequen ce of its use. publicat ion thereof d oes not con vey nor imply any license under patent- or other industrial or intellectual property rights. customer notification this data sheet was changed to reflect the new company name nxp semiconductors. no changes were made to the content, except for the legal definitions and disclaimers. printed in the netherlands 613514/01/pp9 date of release: 2003 may 13 document order number: 9397 750 11148
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